wpmd2013 dual p-channel, -20v, -0.64a, small signal mosfet descriptions the wpmd2013 is p-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, load switch and level shift. standard product wpmd2013 is pb-free. features z trench technology z supper high density cell design z excellent on resistance z extremely low threshold voltage z small package sot- 5 63 applications z dc-dc converter circuit z small signal switch z load switch z level shift sot- 5 63 pin configuration (top view) 1 3 * 1 3 = device code * = month (a~z) marking order information device package shipping wpmd2013-6/tr sot- 5 63 3000/reel&tape v ds (v) rds(on) (
) 0.550@ v gs =-4.5v 0.740@ v gs =-2.5v -20 0.860@ v gs =-1.8v 6 5 4 1 2 3 d1 6 g2 5 s2 4 1 s1 2 g1 3 d2 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs f 6 v t a =25c -0.64 -0.56 continuous drain current a t a =70c i d -0.51 -0.45 a t a =25c 0.37 0.29 maximum power dissipation a t a =70c p d 0.23 0.18 w t a =25c -0.54 -0.50 continuous drain current b t a =70c i d -0.43 -0.40 a t a =25c 0.27 0.22 maximum power dissipation b t a =70c p d 0.17 0.14 w pulsed drain current c i dm -1.0 a operating junction temperature t j 150 c storage temperature range t stg -55 to 150 c thermal resistance ratings single operation parameter symbol typical maximum unit t ? 10 s 285 335 junction-to-ambient thermal resistance a steady state r ja 350 430 t ? 10 s 380 460 junction-to-ambient thermal resistance b steady state r ja 465 555 junction-to-case thermal resistance steady state r jc 280 320 c/w dual operation t ? 10 s 317 370 junction-to-ambient thermal resistance a steady state r ja 375 445 t ? 10 s 425 492 junction-to-ambient thermal resistance b steady state r ja 505 590 junction-to-case thermal resistance steady state r jc 285 325 c/w a. surface mounted on fr4 board using 1 in sq pad size, 1oz cu. b. surface mounted on fr4 board using the minimum recommended pad size, 1oz cu. c. repetitive rating, pulse width limited by junction temperature, tp=10s, duty cycle=1% d. repetitive rating, pulse width limited by junction temperature t j (max)=150c wpmd2013 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua -20 v zero gate voltage drain current i dss v ds =-20 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs =5v -5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d vgs = 4.5v, id = 0. 5a 550 810 vgs = 2.5v, id = a 740 1050 drain-to-source on-resistance r ds(on) vgs = 1.8v, id = a 860 1300 m ? forward transconductance g fs vds = 5 v, id = -0.45a 1.25 s charges, capacitances and gate resistance input capacitance c iss 74.5 output capacitance c oss 10.8 reverse transfer capacitance c rss v gs = 0 v, f = 1 . hz, v ds = 10 v 10.2 pf total gate charge q g(tot) threshold gate charge q g(th) gate-to-source charge q gs gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = -0.45a nc switching characteristics turn-on delay time td(on) 45 rise time tr 140 turn-off delay time td(off) 1500 fall time tf 2100 ns body diode characteristics forward voltage v sd v gs = 0 v, i s v gs = -4.5 v, v ds = -10 v, r g =6 ? i d =-0.45a, = 0v -1 ua = -250ua -0.40 -0.65 -0.90 v = -0.15a -0.50 -0.65 -1.50 v 1.8 0.18 0.74 0.12 wpmd2013 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) 012345 0.0 0.5 1.0 1.5 2.0 v gs = -2.5 ~ -5v output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 300 600 900 1200 1500 t=125 0 c t=-50 0 c transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature v gs = -2.0v v gs = -1.5v -i ds _drain to source current (a) -v ds _drain to source voltage (v) 0.20.40.60.81.0 400 600 800 1000 v gs = -2.5v v gs =-4.5v r ds(on) - on-resistance (m : ) i ds -drain to source current (a) 1.01.52.02.53.03.54.04.5 200 400 600 800 1000 1200 1400 1600 i ds =-0.45a r ds(on) - on-resistance (m : ) -v gs -gate to source voltage(v) -50 0 50 100 150 400 500 600 700 800 v gs =-4.5v i ds =-0.45a r ds(on) - on-resistance (m : ) temperature ( 0 c) t=25 0 c v= - ds 5v -i ds - drain current (a) -v gs - gate to drain voltage (v) -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) wpmd2013 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0.4 0.5 0.6 0.7 0.8 0.9 50 100 150 200 250 t=25 0 c body diode forward voltage safe operating power transient thermal response (junction-to-ambient) 0246810 0 30 60 90 120 v gs =0 f=100khz c-capacitance (pf) -v ds - drain to source voltage (v) cin cout crss t=125 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =350c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d t on p d 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c wpmd2013 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimension sot-563 dimensions in millimeter symbol min. typ. max. a 0.525 0.563 0.600 a1 0.000 0.025 0.050 e 0.450 0.500 0.550 c 0.090 0.125 0.160 d 1.500 1.600 1.700 b 0.170 0.22 0.270 e1 1.100 1.200 1.300 e 1.500 1.600 1.700 l 0.100 0.200 0.300 ? 7 e ref wpmd2013 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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